Real name:
Biography:
Ayayi Claude Ahyi received a PhD. Degree in Electrical Engineering from the “Université des Sciences et Technologies de Lille” (France) in 1997. His PhD research on Ultra High Speed Camera Design, Fabrication and Application to Underwater Acoustic Scattering was an interdisciplinary combination of acoustics and electronics.
After graduation he joined Auburn Alabama (USA) working in Auburn University as a Postdoctoral fellow working in Acoustic Scattering and Organic Semiconductors and Electro-optic modulation.
In 2002 he joined the Solid State Physics group of the Auburn University Physics department as a research associate. Early work in the Physics Department was focused on SiC Schottky devices, in particular the improvement of their breakdown characteristics using various junction termination extensions. The work extended to radiation hardness of SiC semiconductor devices characterizing their operation under proton irradiation.
This work expanded into developing devices using other wide bandgap semiconductor materials such as GaN and ZnO.. In 2007 Dr. Ahyi became a research faculty in the physics at Auburn University and retired in 2023. Dr. Ahyi is the co-recipient of three patents, one on SiC impurity doping another on SiC MOS interface improvement and the third for an ultra-high speed camera.
Dr. Ahyi is currently actively collaborating with the Physics department of the University of Lomé (Togo) in West Africa developing with a team of scholars, bio-organic semiconductors for solar cells and other electronics components.